| PART |
Description |
Maker |
| 2SC2371 |
NPN Silicon Power Transistors 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
|
Micro Commercial Components, Corp.
|
| FMMT38A FMMT38B FMMT38C FMMT38CTA |
SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
300 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Fairchild Semiconductor
|
| Q67000-A5066 TDA4605-3 TDA46053 |
PWM Control IC for SMPS using MOS-Tra...
Control IC for Switched-Mode Power Supplies using MOS-Transistor
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| JANTX2N5665 |
5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-66
|
SEMICOA CORP
|
| QM300HA-24 |
300 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| KSC1507 KSC1507YTSTU KSC1507OTU KSC1507R KSC1507YT |
NPN Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Bulk 0.2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Color TV Chroma Output
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2SD2217 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
0.3 A, 300 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
|
| MJ14001 MJ14003 MJ14002 ON1978 |
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS 60 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AE
60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS 60 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| G372A G935A |
35 A, 160 V, NPN, Si, POWER TRANSISTOR
55 A, 300 V, NPN, Si, POWER TRANSISTOR
|
SEMELAB LTD
|
| BSS73CSM BSS73CSM-QR-B |
Bipolar NPN Device in a Hermetically sealed LCC1
500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Seme LAB
SEMELAB LTD
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
|
